Dr. Prashant Mani is a distinguished academician and researcher specializing in nanoelectronics, VLSI design, and semiconductor device modeling. With over 15 years of experience in teaching and research, he has made significant contributions to the fields of nano-scale devices, SOI MOSFETs, and digital image processing.

He has previously served as:

• Associate Professor at SRM University, Ghaziabad (2018-2022)
• Assistant Professor at SRM University, Ghaziabad (2008-2018)

Currently, he is an Associate Professor at Government Engineering College, Bihar, where he continues to mentor students and conduct groundbreaking research in nanoelectronics and semiconductor analysis.

Significant Achievements

• Published 18 research papers in reputed international journals and conferences.
• Presented research work at several international conferences, including:
  • International Conference on Nanoscience and Nanotechnology (2015)
  • International Conference on Micro-Electronics and Telecommunication Engineering (ICMETE) (2016, SCOPUS Indexed)
  • International Conference on Communication Systems, BKBIET Pilani (2013)
  • Third International Conference on Recent Trends in Computing (ICRTC2015)
• Recipient of prestigious International Scientist Award on Engineering, Science, and Medicine.
• Honored with Best Service Award – INSO AWARD 2022.
• Active Member of leading research organizations, including:
  • International Association of Engineers (IAENG) - Member No. 153138
  • Institute of Research Engineers & Doctors (IRED) - Member No. SM1010003240
  • Institution of Engineers (IE) - Member

Notable Contributions

Dr. Mani has contributed extensively to the advancement of nanoelectronics and semiconductor research, with a focus on modeling, simulation, and analysis of advanced SOI MOSFETs. His research has played a crucial role in improving the performance and efficiency of nano-scale transistors and semiconductor devices.

His key contributions include:

• Development of analytical models for FDSOI MOSFETs using 2D Poisson’s equation.
• Investigations into conduction mechanisms in ultra-thin SOI MOSFETs, contributing to the design of high-performance transistors.
• Research on EEG signal analysis for human emotion detection, integrating artificial intelligence and biomedical engineering.
• Exploration of backscattered Brillouin power as a sensing tool for temperature variations, with applications in fiber-optic communication.

In addition to his research, he has been instrumental in guiding postgraduate and undergraduate students, fostering a strong research culture in nanoelectronics and semiconductor engineering.

Eligibility for Excellent Researcher Award

In recognition of his outstanding research contributions, academic excellence, and innovative work in semiconductor device modeling, Dr. Prashant Mani is eligible to receive the Excellent Researcher Award in Scientific Laurels. His impactful research, combined with his dedication to advancing knowledge in nanoelectronics and VLSI design, makes him a deserving recipient of this prestigious honor.